New insight into desorption step by Ar+ ion-bombardment during the atomic layer etching of silicon-Reference-Cited by-同舟云学术

New insight into desorption step by Ar+ ion-bombardment during the atomic layer etching of silicon

Published:2018-05 Issue:3 Volume:36 Page:031303
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Sherpa Sonam D.¹,Ventzek Peter L. G.²,Lee Myungsuk³,Hwang Gyeong S.³,Ranjan Alok⁴

Affiliation:

1. TEL Technology Center, America, LLC, 255 Fuller Road, Suite 214, Albany, New York 12203

2. Tokyo Electron America, Inc., 2400 Grove Blvd., Austin, Texas 78741

3. Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712

4. Tokyo Electron Miyagi, Ltd., 1 Techno-Hills, Taiwa-cho, Kurokawa-gun, Miyagi 9813629, Japan and TEL Technology Center, America, LLC, 255 Fuller Road, Suite 214, Albany, New York 12203

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5016530

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1. Quasi‐atomic layer etching of silicon with surface chlorination and removal using Ar or He plasmas;Plasma Processes and Polymers;2024-03-22

2. A density functional tight-binding based strategy for modeling ion bombardment and its application to Ar bombardment of silicon nitride;Journal of Applied Physics;2024-03-04

3. Selective area doping of GaN toward high-power applications;Journal of Physics D: Applied Physics;2023-06-13

4. Five-step plasma-enhanced atomic layer etching of silicon nitride with a stable etched amount per cycle;Japanese Journal of Applied Physics;2022-05-23

5. Structural and electrical characteristics of ion-induced Si damage during atomic layer etching;Japanese Journal of Applied Physics;2022-04-22