Comparative study of two atomic layer etching processes for GaN-Reference-Cited by-同舟云学术

Comparative study of two atomic layer etching processes for GaN

Published:2020-05 Issue:3 Volume:38 Page:032602
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Mannequin Cédric¹,Vallée Christophe¹²,Akimoto Katsuhiro¹,Chevolleau Thierry²,Durand Christophe³,Dussarrat Christian⁴,Teramoto Takashi⁴,Gheeraert Etienne¹⁵^ORCID,Mariette Henri¹³⁵

Affiliation:

1. Institute of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan

2. CNRS/LTM, University of Grenoble-Alpes, Grenoble 38000, France

3. CEA/IRIG/PHELIQS, University of Grenoble-Alpes, Grenoble 38054, France

4. Air Liquide Laboratories, Yokosuka 239-0847, Japan

5. CNRS/Institut Néel, University of Grenoble-Alpes, Grenoble 38042, France

Funder

Agence Nationale de la Recherche

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5134130

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