Influence of a piezoelectric field on the electron distribution in a double GaN/Al0.14Ga0.86N heterojunction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124206
Reference22 articles.
1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
2. Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
3. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells
4. Effects of piezoelectric field on defect formation, charge transfer, and electron transport at GaN/AlxGa1−xN interfaces
5. Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells
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