Author:
Huque M.A.,Eliza S.A.,Rahman T.,Huq H.F.,Islam S.K.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. Emerging gallium nitride based devices;Mohammad;Proc IEEE,1995
2. GaN based transistors for high-power applications;Shur;Solid State Electron,1998
3. Mishra UK, Wu YF, Keller BP, Keller S, Denbaars SP. GaN based microwave power HEMTs. In: Proceedings of the international workshop on physics of semiconductor devices; 1998. p. 878–83.
4. Wide band gap semiconductor microwave technologies: from promise to practice;Zolper;Technical Dig IEDM,1999
5. AlGaN/GaN self-aligned MODFET with metal oxide gate for millimeter wave applications;Huq;Microelectron J,2006
Cited by
72 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献