Electrical and structural properties of poly-Si films grown by furnace and rapid thermal annealing of amorphous Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368352
Reference14 articles.
1. XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's
2. Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film Transistor
3. Crystal forms by solid‐state recrystallization of amorphous Si films on SiO2
4. Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films
5. High performance low-temperature poly-Si n-channel TFTs for LCD
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2. Novel Fabrication of Lightly Doped-Drain for Suppressing the Leakage Current in Polycrystalline Silicon Thin-Film Transistor;Journal of Nanoscience and Nanotechnology;2017-05-01
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