Novel Fabrication of Lightly Doped-Drain for Suppressing the Leakage Current in Polycrystalline Silicon Thin-Film Transistor-Reference-Cited by-同舟云学术

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Novel Fabrication of Lightly Doped-Drain for Suppressing the Leakage Current in Polycrystalline Silicon Thin-Film Transistor

Published:2017-05-01 Issue:5 Volume:17 Page:3465-3468
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Kim Hyung Yoon¹,Seok Ki Hwan¹,Kiaee Zohreh¹,Chae Hee Jae¹,Lee Sol Kyu¹,Lee Yong Hee¹,Ki Joo Seung¹

Affiliation:

1. Research Institute of Advanced Materials (RIAM) and Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, South Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Flexible High-Temperature Polycrystalline Silicon Thin Film Transistor on Metal Foil With S/D Doped by Diffusion;IEEE Transactions on Electron Devices;2021-08

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