Crystal forms by solid‐state recrystallization of amorphous Si films on SiO2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105382
Reference6 articles.
1. Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters
2. Control of Resistivity of Polycrystalline Si Films by Solid-Phase Recrystallization (SPR)
3. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
4. Some observations on the amorphous to crystalline transformation in silicon
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