Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth
Author:
Affiliation:
1. Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom
Funder
Engineering and Physical Sciences Research Council (EPSRC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4932122
Reference28 articles.
1. Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared
2. Growth of Ga(AsBi) on GaAs by continuous flow MOVPE
3. Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi
4. Molecular beam epitaxy growth of GaAsBi using As2 and As4
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