Reflectance anisotropy spectroscopy of strain-engineered GaAsBi alloys-Reference-Cited by-同舟云学术

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Reflectance anisotropy spectroscopy of strain-engineered GaAsBi alloys

Published:2022-01-17 Issue:3 Volume:120 Page:031902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Goletti C.¹^ORCID,Fazi L.¹,Tisbi E.¹,Bonanni B.¹^ORCID,Placidi E.²³^ORCID,Arciprete F.¹³^ORCID

Affiliation:

1. Dipartimento di Fisica, Università di Roma “Tor Vergata,” Via della Ricerca Scientifica 1, I-00133 Roma, Italy

2. Dipartimento di Fisica, Università di Roma “La Sapienza,” Piazzale Aldo Moro 2, I-00185 Roma, Italy

3. Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche, Via Fosso del Cavaliere 100, I-00133 Roma, Italy

Funder

University of Rome Tor Vergata

CNR

Sapienza Università di Roma

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0077525

Reference39 articles.

1. Growth and properties of the dilute bismide semiconductor GaAs_{1−xBi_{x a complementary alloy to the dilute nitrides}}

2. Molecular beam epitaxy growth of GaAs1−xBix

3. Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth

4. Bismuth nano-droplets for group-V based molecular-beam droplet epitaxy

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1. Interfacial optical anisotropy of Cu(110) electrochemistry using singular value decomposition;Applied Surface Science;2024-10

2. Bismuth Ordering and Optical Anisotropy in GaAsBi Alloys;physica status solidi (b);2024-08-26

3. Strain mapping in amorphous germanium thin films with scanning reflectance anisotropy microscopy;Applied Physics Letters;2024-07-22

4. In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors;Advances in Materials Science and Engineering;2023-12-13

5. Reflectance anisotropies of polycrystalline Ce1−x Gdx O2−x/2/ Si(001) interfaces;Applied Surface Science;2023-12

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