Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low Dit
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3615680
Reference14 articles.
1. Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4)
2. Anomalous frequency dispersion of m.o.s. capacitors formed on n-type GaAs by anodic oxidation
3. Si3N4/Si/n‐GaAs capacitor with minimum interface density in the 1010eV−1 cm−2range
4. Development methodology for high-κ gate dielectrics on III–V semiconductors: Gd[sub x]Ga[sub 0.4−x]O[sub 0.6]∕Ga[sub 2]O[sub 3] dielectric stacks on GaAs
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3. Interfacial and electrical properties of Al 2 O 3 /HfO 2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface;Materials Research Bulletin;2017-03
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