Development methodology for high-κ gate dielectrics on III–V semiconductors: Gd[sub x]Ga[sub 0.4−x]O[sub 0.6]∕Ga[sub 2]O[sub 3] dielectric stacks on GaAs
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Published:2005
Issue:4
Volume:23
Page:1773
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:en
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Short-container-title:J. Vac. Sci. Technol. B
Author:
Passlack Matthias
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
38 articles.
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