Electrical properties of the HfO2–Al2O3 nanolaminates with homogeneous and graded compositions on InP-Reference-Cited by-同舟云学术

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Electrical properties of the HfO2–Al2O3 nanolaminates with homogeneous and graded compositions on InP

Published:2016-03 Issue:3 Volume:16 Page:294-299
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Mahata Chandreswar,An Youngseo,Choi Sungho,Byun Young-Chul,Kim Dae-Kyoung,Lee Taeyoon,Kim Jiyoung,Cho Mann-Ho,Kim Hyoungsub

Funder

MOTIE

KSRC

National Research Foundation

Ministry of Education

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference27 articles.

1. Integrated nanoelectronics for the future

2. Ultrahigh-Speed 0.5 V Supply Voltage $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ Quantum-Well Transistors on Silicon Substrate

3. Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future

4. Interface-Trap Effects in Inversion-Type Enhancement-Mode $\hbox{InGaAs/ZrO}_{2}$ N-Channel MOSFETs

5. A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al₂O₃ Interlayers;ACS Applied Electronic Materials;2023-02-09

2. Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al2O3 Interlayers;ACS APPL ELECTRON MA;2023

3. Combinatorial ALD for the growth of ZnO/TiO₂nanolaminates and mixed ZnO/TiO₂nanostructured films;Materials Advances;2022

4. Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film;Nanomaterials;2021-08-27

5. Atomic Layer Deposition and Properties of HfO2-Al2O3 Nanolaminates;ECS Journal of Solid State Science and Technology;2018

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