Interfacial and electrical properties of Al 2 O 3 /HfO 2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface-Reference-Cited by-同舟云学术

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Interfacial and electrical properties of Al 2 O 3 /HfO 2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface

Published:2017-03 Issue: Volume:87 Page:208-213
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Patil V.S.,Agrawal K.S.,Khairnar A.G.,Thibeault B.J.,Mahajan A.M.

Funder

UGC-BSR

DST-INSPIRE

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. 17th International Workshop on Physics of Semiconductor Devices 2014, Noida, India, 2014 7–10 December, 2013;Khairnar,2014

2. Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer deposition

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Interfacial Defects Characteristic and Low-Temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge- Based Mos Device and High Purity Germanium Detectors;2024

2. White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO₂/Al₂O₃ and Al₂O₃/HfO₂/Al₂O₃ Gate Dielectric Stacks for High Total Doses;IEEE Transactions on Device and Materials Reliability;2023-03

3. Plasma-enhanced atomic layer-deposited La2O3 ultra-thin films on Si and 6H–SiC: a comparative study;Applied Physics A;2020-07-31

4. Temperature-dependent study of slow traps generation mechanism in HfO2/GeON/Ge(1 1 0) metal oxide semiconductor devices;Solid-State Electronics;2020-05

5. Atomic layer deposited HfO2 ultra-thin films on different crystallographic orientation Ge for CMOS applications;Thin Solid Films;2018-05

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