Insitureal‐time determination of the free‐carrier density in doped ZnSe films during molecular beam epitaxial growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106856
Reference14 articles.
1. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
2. Blue‐green laser diodes
3. Blue‐green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells
4. Characteristics of Cl‐doped ZnSe layers grown by molecular‐beam epitaxy
5. Separation of intrinsic and extrinsic optical absorption in a fluoride glass
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1. Diffusion lengths of carriers in n- and p-type ZnMgSSe cladding layers of green laser diodes;Journal of Applied Physics;1998-10
2. Optimization of AlGaN films grown by RF atomic nitrogen plasma using in-situ cathodoluminescence;Journal of Crystal Growth;1997-05
3. Optimization of III-N Based Devices Grown by RF Atomic Nitrogen Plasma Using In-Situ Cathodoluminescence;MRS Proceedings;1997
4. Ex situ formation of HgSe electrical contacts to p-ZnSe;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-01
5. Radiative and nonradiative rates and deep levels in zinc selenide grown by molecular‐beam epitaxy;Journal of Applied Physics;1995-08
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