Characteristics of Cl‐doped ZnSe layers grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339323
Reference13 articles.
1. Characterization of ZnSe grown by molecular-beam epitaxy
2. Growth of undoped, high purity, high resistivity ZnSe layers by molecular beam epitaxy
3. Growth temperature dependence of crystallographic and luminescent properties of by low-pressure MOVPE
4. Conduction mechanism in low‐resistivityn‐type ZnSe prepared by organometallic chemical vapor deposition
5. Photoluminescence properties of nitrogen‐doped ZnSe grown by molecular beam epitaxy
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