Surface cleaning and annealing effects on Ni∕AlGaN interface atomic composition and Schottky barrier height
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1785287
Reference25 articles.
1. Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag
2. Cleaning of AlN and GaN surfaces
3. Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN
4. Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment
5. Influence of premetallization surface treatment on the formation of Schottky Au-nGaN contacts
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