A review of metal–semiconductor contacts for β-Ga2O3

Abstract

Abstract β-Gallium oxide (β-Ga2O3) has been studied extensively in recent decades due to its excellent usability in fabricating a variety of devices, such as solar-blind photodetectors and power devices. However, as an important part of a device, related investigations of β-Ga2O3–metal contacts, especially for Schottky contacts, are rare. In this review, we summarize recent research progress on β-Ga2O3–metal contacts, including related theories, measurements, fabrication processes, control methods, etc. This review will provide insights for both theoretical understanding of the metal/semiconductor interface, as well as the fabrication process for engineering applications of Ga2O3-based devices.