Correlation between border traps and exposed surface properties in gate recessed normally-off Al2O3/GaN MOSFET
Author:
Affiliation:
1. Institute of Microelectronics, Peking University, Beijing 100871, China
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5037646
Reference26 articles.
1. GaN on Si Technologies for Power Switching Devices
2. GaN-on-Si Power Technology: Devices and Applications
3. High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique
4. 900 V/1.6 ${\rm m}\Omega\cdot{\rm cm}^{2}$ Normally Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET on Silicon Substrate
5. Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory
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