Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory-Reference-Cited by-同舟云学术

Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory

Published:2015-06-15 Issue:24 Volume:106 Page:243503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ramanan Narayanan¹^ORCID,Lee Bongmook¹,Misra Veena¹

Affiliation:

1. Department of Electrical and Computer Engineering, North Carolina State University, 2410 Campus Shore Drive, Raleigh, North Carolina 27695, USA

Funder

National Science Foundation (NSF)

Office of Naval Research (ONR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4922799

Reference12 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

3. Impact of ALD Gate Dielectrics (SiO2, HfO2, and SiO2/HAH) on Device Electrical Characteristics and Reliability of AlGaN/GaN MOSHFET Devices

4. Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique

5. Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

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