Surface recombination velocity of silicon wafers by photoluminescence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1884258
Reference19 articles.
1. D. K. Schroder, Semiconductor Material and Device Characterization, 2nd ed. (Wiley-Interscience, New York, 1998), pp. 420–508.
2. Contactless measurement of bulk lifetime and surface recombination velocity in silicon wafers
3. Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation
4. Recombination rate saturation mechanisms at oxidized surfaces of high‐efficiency silicon solar cells
5. Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafers
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