Contactless measurement of bulk lifetime and surface recombination velocity in silicon wafers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1562741
Reference9 articles.
1. Temperature dependence of dislocation efficiency as sinks for self‐interstitials in silicon as measured by gold diffusion
2. Two-dimensional resolution of minority carrier diffusion constants in different silicon materials
3. Minority carrier lifetime scan map in crystalline silicon wafers
4. In situ bulk lifetime measurement on silicon with a chemically passivated surface
5. Surface recombination velocity measurements at the silicon–silicon dioxide interface by microwave‐detected photoconductance decay
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