Origin of the current saturation level of p-doped silicon field emitters-Reference-Cited by-同舟云学术

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Origin of the current saturation level of p-doped silicon field emitters

Published:2022-01 Issue:1 Volume:40 Page:013203
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Edler Simon¹^ORCID,Schels Andreas¹^ORCID,Herdl Florian¹,Hansch Walter¹,Bachmann Michael²^ORCID,Dudeck Markus²,Düsberg Felix²,Pahlke Andreas²,Hausladen Matthias³,Buchner Philipp³,Schreiner Rupert³

Affiliation:

1. Institute of Physics, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, 85577 Neubiberg, Germany

2. Ketek GmbH, 81737 Munich, Germany

3. Faculty of Applied Natural Sciences and Cultural Studies, OTH Regensburg, 93053 Regensburg, Germany

Funder

Bayerische Forschungsstiftung

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://avs.scitation.org/doi/pdf/10.1116/6.0001554

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Uniform Current Supply in Gated p-Type Si-Tips for Achieving High-Performance Field Electron Emitter Array;IEEE Transactions on Electron Devices;2024-08

2. Quantitative Field Emission Imaging for Studying the Doping-Dependent Emission Behavior of Silicon Field Emitter Arrays;Micromachines;2023-10-28

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