Effects of applied electric field and hydrostatic pressure on donor impurity states in cylindrical GaN/AlN quantum dot
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3275507
Reference31 articles.
1. Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots
2. Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers
3. Electron dynamics in GaN wafers with an inhomogeneous distribution of defects in the depth direction
4. GaN, AlN, and InN: A review
5. Excitonic properties of strained wurtzite and zinc-blende GaN/AlxGa1−xN quantum dots
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1. Study of hydrostatic pressure, electric and magnetic fields effects on the donor binding energy in multilayer cylindrical quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2021-03
2. Binding energy and diamagnetic susceptibility of donor impurities in quantum dots with different geometries and potentials;Materials Science and Engineering: B;2020-12
3. Pressure dependent optical properties of quantum dot with spin orbit interaction and magnetic field;Optik;2019-01
4. Electric field effect on lowest excited-state binding energy of hydrogenic impurity in (In,Ga)N parabolic wire;Semiconductors;2016-04
5. Exciton-related optical properties in zinc-blende GaN/InGaN quantum wells under hydrostatic pressure;physica status solidi (b);2015-02-12
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