Electron dynamics in GaN wafers with an inhomogeneous distribution of defects in the depth direction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3197281
Reference27 articles.
1. Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution
2. Time-resolved photoluminescence studies of free and donor-bound exciton in GaN grown by hydride vapor phase epitaxy
3. Radiative and Nonradiative Exciton Lifetimes in GaN Grown by Molecular Beam Epitaxy
4. Electron and hole dynamics in GaN
5. Femtosecond dynamics of exciton bleaching in bulk GaN at room temperature
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3. Effects of laser field and electric field on impurity states in zinc-blende GaN/AlGaN quantum well;Physics Letters A;2011-07
4. Hydrogenic impurity states in zinc-blende symmetric InGaN/GaN multiple quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2010-11
5. Effects of applied electric field and hydrostatic pressure on donor impurity states in cylindrical GaN/AlN quantum dot;Journal of Applied Physics;2010-01
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