Author:
Jenny J. R.,Malta D. P.,Tsvetkov V. F.,Das M. K.,Hobgood H. McD.,Carter C. H.,Kumar R. J.,Borrego J. M.,Gutmann R. J.,Aavikko R.
Subject
General Physics and Astronomy
Reference22 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields
3. Minority carrier diffusion length measurements in 6H–SiC
4. Understanding The Role Of Defects In Limiting The Minority Carrier Lifetime In Sic
5. See, for example, A. G. Milnes , inAdvances in Electronics and Electron Physics, edited by P. W. Hawkes (Academics, Orlando, FL, 1983), Vol. 61, p. 63.
Cited by
35 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献