Charge transport in semi insulating bulk 4H-Silicon carbide: Effect of metallization and wafer homogeneity-Reference-Cited by-同舟云学术

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Charge transport in semi insulating bulk 4H-Silicon carbide: Effect of metallization and wafer homogeneity

Published:2022-12 Issue: Volume:43 Page:106110
ISSN:2211-3797
Container-title:Results in Physics
language:en
Short-container-title:Results in Physics

Author:

Praus P.,Betušiak M.,Belas E.,Kunc J.,Grill R.,Brynza M.,Pipek J.

Funder

Charles University

Grantová Agentura, Univerzita Karlova

Grantová Agentura České Republiky

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference39 articles.

1. Comparative study of Single Crystal (SC)-Diamond and 4H-SiC bulk radiation detectors for room temperature alpha spectroscopy;Mohapatra;J Instrum,2021

2. Deep-level transient spectroscopy and radiation detection performance studies on neutron irradiated 250-μm-thick 4H-SiC epitaxial layers;Kleppinger;IEEE Trans Nucl Sci,2022

3. Study of Silicon Carbide for X-Ray Detection and Spectroscopy;Bertuccio;IEEE Trans Nucl Sci,2003

4. Silicon carbide and its use as a radiation detector material;Nava;Meas Sci Technol,2008

5. Lifetime-limiting defects in 4H-SiC epilayers;Klein;Appl Phys Lett,2006

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Position-resolved charge collection of silicon carbide detectors with an epitaxially-grown graphene layer;Scientific Reports;2024-05-06

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