Non‐Newtonian strain relaxation in highly strained SiGe heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100223
Reference9 articles.
1. Erratum: Relaxation of strained‐layer semiconductor structures via plastic flow [Appl. Phys. Lett. 51, 1325 (1987)]
2. Erratum: Relaxation of strained‐layer semiconductor structures via plastic flow [Appl. Phys. Lett. 51, 1325 (1987)]
3. Critical Stresses forSixGe1−xStrained-Layer Plasticity
4. Nature of misfit dislocation sources in strained‐layer semiconductor structures
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