The misfit dislocation density profile in graded SiGe/Si(001) layers prepared at different temperatures
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/25/i=17/a=175802/pdf
Reference16 articles.
1. High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates
2. Concentration and relaxation depth profiles of InxGa1−xAs/GaAs and GaAs1−xPx/GaAs graded epitaxial films studied by x-ray diffraction
3. Initial misfit dislocations in a graded heteroepitaxial layer
4. Diffuse X-ray scattering from graded SiGe/Si layers
5. X-ray diffraction peaks due to misfit dislocations in heteroepitaxial structures
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2. Influence of n-Mosfet transistor on dye-sensitized solar cell efficiency;Heliyon;2018-12
3. Low-Temperature and Metamorphic Buffer Layers;Handbook of Crystal Growth;2015
4. Corrigendum: The misfit dislocation density profile in graded SiGe/Si(001) layers prepared at different temperatures;Journal of Physics: Condensed Matter;2013-11-08
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