High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates-Reference-Cited by-同舟云学术

High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates

Published:2011-06-15 Issue:12 Volume:109 Page:123714
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhylik A.,Benediktovich A.,Ulyanenkov A.,Guerault H.,Myronov M.,Dobbie A.,Leadley D. R.,Ulyanenkova T.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3597828

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