Initial misfit dislocations in a graded heteroepitaxial layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3533995
Reference20 articles.
1. Dislocation morphology in graded heterojunctions: GaAs1?xPx
2. Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVD
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