Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVD

Author:

Biefeld R.M.,Hills C.R.,Lee S.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 69 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

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3. Design of nonlinear metamorphic buffer layers for lattice-mismatched InxGa1−xAs/GaAs (001) semiconductor devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09

4. Comparison of Continuously- and Step-Graded ZnS y Se1−y /GaAs (001) Metamorphic Buffer Layers;Journal of Electronic Materials;2014-05-16

5. Lattice relaxation and misfit dislocations in nonlinearly graded InxGa1 − xAs/GaAs (001) and GaAs1 − yPy/GaAs (001) metamorphic buffer layers;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-05

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