Deep level defects in Si-doped AlxGa1−xN films grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1887817
Reference16 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
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4. Analysis of deep levels inn‐type GaN by transient capacitance methods
5. Deep‐level defects and n‐type‐carrier concentration in nitrogen implanted GaN
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