Deep‐level defects and n‐type‐carrier concentration in nitrogen implanted GaN-Reference-Cited by-同舟云学术

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Deep‐level defects and n‐type‐carrier concentration in nitrogen implanted GaN

Published:1996-10-21 Issue:17 Volume:69 Page:2525-2527
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Haase D.,Schmid M.,Kürner W.,Dörnen A.,Härle V.,Scholz F.,Burkard M.,Schweizer H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.117727

Reference11 articles.

Cited by 155 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals;Applied Physics Letters;2024-06-03

2. Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy;physica status solidi (a);2023-05-10

3. Low leakage current in isolated AlGaN/GaN heterostructure on Si substrate by N ion implantation performed at an elevated temperature;Applied Physics Letters;2023-02-06

4. Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes;Energies;2023-01-04

5. The Radial Effect for E1 and E3 Deep Traps Concentration in n-GaN Layers;Acta Physica Polonica A;2022-11

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