Short exciton radiative lifetime in submonolayer InGaAs∕GaAs quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2839312
Reference22 articles.
1. Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices
2. 0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
3. 3.9 W CW power from sub-monolayer quantum dot diode laser
4. High power lasers based on submonolayer InAs–GaAs quantum dots and InGaAs quantum wells
5. Front cover
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2. Tailoring Energy Band Alignment of Vertically Aligned InGaAs Quantum Dots Capped with GaAs(Sb)/AlGaAsSb Composite Structure after Thermal Annealing Treatment;ACS Photonics;2017-02-03
3. Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots;Applied Physics Letters;2015-11-16
4. Carrier dynamics in InAs/GaAs submonolayer stacks coupled to Stranski-Krastanov quantum dots;Physical Review B;2013-07-25
5. Wide depletion width of 1 eV GaInNAs solar cells by thermal annealing;Applied Physics Letters;2011-10-10
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