Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1584077
Reference12 articles.
1. High transconductance-normally-off GaN MODFETs
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3. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
4. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
5. Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates
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