Temperature-dependent carrier trapping processes in short period quantum wire superlattices grown by flow rate modulation epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1290693
Reference20 articles.
1. Stimulated emission in semiconductor quantum wire heterostructures
2. AlGaAs/GaAs quantum wire lasers fabricated by flow rate modulation epitaxy
3. Ultrafast carrier capture and long recombination lifetimes in GaAs quantum wires grown on nonplanar substrates
4. Flow rate modulation epitaxy of AlGaAs/GaAs quantum wires on nonplanar substrate
5. Temperature dependent pohotoluminescence investigation of AlGaAs/GaAs quantum wires grown by flow rate modulation epitaxy
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2. Surface supersaturation in flow-rate modulation epitaxy of GaN;Journal of Crystal Growth;2017-06
3. Improved crystalline quality of N-polar GaN epitaxial layers grown with reformed flow-rate-modulation technology;Japanese Journal of Applied Physics;2016-11-30
4. N-face GaN$(000\bar{1})$ films with hillock-free smooth surfaces grown by group-III-source flow-rate modulation epitaxy;Japanese Journal of Applied Physics;2016-02-24
5. N-face GaN($000\bar{1}$) films grown by group-III-source flow-rate modulation epitaxy;Japanese Journal of Applied Physics;2014-09-12
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