AlGaAs/GaAs quantum wire lasers fabricated by flow rate modulation epitaxy
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19990458?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Lasing from excitons in quantum wires
2. High efficiency and low threshold current strained V‐groove quantum‐wire lasers
3. Vertically stacked multiple‐quantum‐wire semiconductor diode lasers
4. Self-limiting effects of flow rate modulation epitaxy of GaAs on patterned substrate
5. Large excited state Stokes shift in crescent-shaped AlGaAs/GaAs quantum wires
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2. Coherent Control of Semiconductor Quantum Wire by High-Resolution and Stable Michelson Interferometer;IEEJ Transactions on Sensors and Micromachines;2008
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4. Photoconductive characteristics in a trench-type InGaAs quantum-wire field effect transistor;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
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