The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films-Reference-Cited by-同舟云学术

The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films

Published:2015-06-08 Issue:23 Volume:106 Page:231103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Pengzhan¹²,Chen Kunji¹,Lin Zewen¹^ORCID,Dong Hengping³,Li Wei¹,Xu Jun¹,Huang Xinfan¹

Affiliation:

1. State Key Laboratory of Solid State Microstructures and School of Electron Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China

2. School of Information Science and Engineering, Jinling College, Nanjing University, Nanjing 210093, People's Republic of China

3. Taizhou Institute of Science and Technology, Nanjing University of Science and Technology, Taizhou 225300, People's Republic of China

Funder

Natural Science Foundation Project for Unversities of Jiangsu Province

State Key Development Program for Basic Research of China

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4922465

Reference26 articles.

1. Oxynitride films formed by low energy NO+ implantation into silicon

2. Overcoming electrical and mechanical challenges of continuous wave laser processing for Ni–Cu plated solar cells

3. Light emission of silicon oxynitride films prepared by reactive sputtering of silicon

4. Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride

5. Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films

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