Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1405806
Reference16 articles.
1. The effect of rapid thermal N2O nitridation on the oxide/Si(100) interface structure
2. N depth profiles in thin SiO2 grown or processed in N2O: The role of atomic oxygen
3. Role of interfacial nitrogen in improving thin silicon oxides grown in N2O
4. Nitrogen depletion during oxidation in N2O
5. Furnace formation of silicon oxynitride thin dielectrics in nitrous oxide (N2O): The role of nitric oxide (NO)
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