Intrinsic stress in hydrogenated amorphous silicon deposited with a remote hydrogen plasma
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351057
Reference18 articles.
1. Stability of hydrogenated amorphous silicon deposited at high temperatures with a remote hydrogen plasma
2. Hydrogen-related mechanical stress in amorphous silicon and plasma-deposited silicon nitride
3. Change in Film Stress of a-Si:H by Annealing
4. Intrinsic stress and hydrogen bonding in glow‐discharge amorphous silicon films
5. Plasma-enhanced deposition of amorphous silicon at temperatures between 300 and 500 °C
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2. Thermally induced recrystallization of textured hydrogenated nanocrystalline silicon;Physical Review B;2014-01-06
3. Optimisation of p-doped μc-Si:H Emitter Layers in Crystalline-amorphous Silicon Heterojunction Solar Cells;Energy Procedia;2012
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