Change in Film Stress of a-Si:H by Annealing
Author:
Affiliation:
1. Department of Metallurgical Engineering, College of Engineering, University of Osaka Prefecture
2. Graduate Student, University of Osaka Prefecture
Publisher
Japan Institute of Metals
Subject
General Engineering
Link
https://www.jstage.jst.go.jp/article/matertrans1960/27/10/27_10_789/_pdf
Reference7 articles.
1. 1) E. Maruyama: Fundamentals of Amorphous Semiconductors, (in Japanese), Edited by K. Tanaka, Ohm-sha, Tokyo, (1975), p. 173.
2. 2) K. Ozawa, N. Takagi and K. Asano: Japanese J. Appl. Phys., 22 (1983), 767.
3. 3) R. J. Jaccodine and W. A. Schlegel: J. Appl. Phys., 37 (1966), 2429.
4. 4) R. C. Sun, T. C. Tisone and P. D. Cruzan: J. Appl. Phys., 46 (1975), 112.
5. 5) M. H. Brodsky, M. A. Frisch and J. F. Ziegler: Appl. Phys. Lett., 30 (1977), 561.
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