Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate

Published:2020-06-08 Issue:23 Volume:116 Page:232101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Stanchu Hryhorii V.¹^ORCID,Kuchuk Andrian V.¹^ORCID,Mazur Yuriy I.¹^ORCID,Margetis Joe²,Tolle John²,Yu Shui-Qing³,Salamo Gregory J.¹

Affiliation:

1. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

2. ASM, 3440 East University Drive, Phoenix, Arizona 85034, USA

3. Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

Funder

U.S. Air Force

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0011842

Reference30 articles.

1. Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors

2. Electronic band structure and effective mass parameters of Ge1-xSnx alloys

3. Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

4. Photovoltage spectroscopy of direct and indirect bandgaps of strained Ge1-Sn thin films on a Ge/Si(001) substrate

5. Molecular beam epitaxy of metastable, diamond structure SnxGe1−xalloys

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Full Picture of Lattice Deformation in a Ge_{1 − x}Sn_x Micro‐Disk by 5D X‐ray Diffraction Microscopy;Small Methods;2024-07-29

2. Composition and strain effects on Raman vibrational modes of GeSn alloys with Sn contents up to 31 % grown by low-temperature molecular beam epitaxy;Optical Materials;2024-03

3. Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge_1–xSn_x Epilayers Grown by MBE at Different Temperatures;Crystal Growth & Design;2023-10-16

4. Composition and strain dependence of intrinsic and substitutional defect formation energies in SnxGe1−x alloys;Results in Surfaces and Interfaces;2023-08

5. Photoconductivity of GeSn thin films with up to 15% Sn content;Physical Review Materials;2023-07-14

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3