Observation of compositional modulation in (111)A InGaAs quantum wells and the effect on optical properties
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118133
Reference16 articles.
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. An approach to the formation mechanism of the composition fluctuation in GaInNAs quantum wells;Semiconductor Science and Technology;2005-09-19
2. Structural properties of strained piezoelectric [111]A-oriented InGaAs/GaAs quantum well structures grown by MOVPE;Journal of Crystal Growth;2003-02
3. MOVPE growth of highly-strained piezoelectric InGaAs/GaAs quantum wells on [111]A-oriented substrates;Journal of Crystal Growth;2001-05
4. Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100–1550 nm range;Journal of Applied Physics;2000-09
5. Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
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