Proper interpretation of photoconductive decay transients in semiconductors having finite surface recombination velocity
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357304
Reference15 articles.
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4. Contactless nondestructive measurement of bulk and surface recombination using frequency-modulated free carrier absorption
5. Separation of the bulk and surface components of recombination lifetime obtained with a single laser/microwave photoconductance technique
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2. Measurements of photoconductive transients in vapor grown CdTe:Cl over wide temperature and dopant concentration ranges;Journal of Applied Physics;2012-07-15
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4. Modelling the ultraviolet irradiation effect on the effective minority carrier recombination lifetime of silicon wafers;Journal of Applied Physics;1999-01-15
5. A measurement of the electron‐hole lifetimes in CdZnTe at 300 and 79 K using a pulsed x‐ray microwave technique;Applied Physics Letters;1996-08-26
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