Suppression of tin precipitation in SiSn alloy layers by implanted carbon-Reference-Cited by-同舟云学术

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Suppression of tin precipitation in SiSn alloy layers by implanted carbon

Published:2014-06-09 Issue:23 Volume:104 Page:231903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gaiduk P. I.¹²,Lundsgaard Hansen J.¹,Nylandsted Larsen A.¹,Bregolin F. L.³,Skorupa W.³

Affiliation:

1. Department of Physics and Astronomy/iNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C, Denmark

2. Belarusian State University, prosp. Nezavisimosti 4, 220030 Minsk, Belarus

3. Department of Semiconductor Materials, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany

Funder

Marie Curie International Incoming Fellowship within the 7th European Community Framework Programme, Call reference: FP7-PEOPLE-2011-IIF

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4882175

Reference27 articles.

1. New classes of Si-based photonic materials and device architectures via designer molecular routes

2. Electronic properties of metastableGexSn1−xalloys

3. Quasiparticle electronic and optical properties of the Si–Sn system

4. Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials

5. Interband Transitions inSnxGe1−xAlloys

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Texture of NiGe(Sn) on Ge(100) and its evolution with Sn content;Journal of Applied Crystallography;2021-08-18

2. Enhanced thermal stability of Ni/GeSn system using pre-amorphization by implantation;Journal of Applied Physics;2021-03-21

3. Thermal Conductivity of Nanostructured Semiconductor Alloys;Handbook of Materials Modeling;2020

4. Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation;Scientific Reports;2019-10-04

5. Structural characterization of tin nanocrystals embedded in silicon by atomic probe tomography;Materials Research Express;2019-03-06

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