Quantum transport in high mobility modulation doped Ga0.25In0.75As/InP quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368272
Reference69 articles.
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2. Effect of Strain on Electron Transport and Quantum Lifetimes in InxGa1−xAs/In0.52Al0.48As Modulation Doped Double Quantum Well‐Based High Electron Mobility Transistor Structures;physica status solidi (b);2024-03-03
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4. Effects of Si δ -Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures;Chinese Physics Letters;2015-09
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