Effects of Si δ -Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/32/9/097101/pdf
Reference19 articles.
1. First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process
2. A 0.85 THz Low Noise Amplifier Using InP HEMT Transistors
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1. Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology;Chinese Physics B;2022-01-01
2. Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance ability;Acta Physica Sinica;2022
3. Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation;Chinese Physics B;2021-09-29
4. An overview of thermoelectric films: Fabrication techniques, classification, and regulation methods;Chinese Physics B;2018-04
5. Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In x Ga 1− x As/In 0.52 Al 0.48 As HEMT structures;Chinese Physics B;2016-08-30
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