AlInAs-GaInAs HEMT for microwave and millimeter-wave applications-Reference-Cited by-同舟云学术

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AlInAs-GaInAs HEMT for microwave and millimeter-wave applications

Published:1989 Issue:9 Volume:37 Page:1279-1285
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Mishra U.K.,Brown A.S.,Delaney M.J.,Greiling P.T.,Krumm C.F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx1/22/1397/00032210.pdf?arnumber=32210

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compound Semiconductor Device Structures;Materials Science and Technology;2013-02-15

2. AlGaN-Based Microwave Transmit and Receive Modules;MRS Proceedings;2000

3. Impact Ionization in InAlAs/InP Single Channel Heterojunction Field Effect Transistors;Japanese Journal of Applied Physics;1999-05-15

4. Verstärker;Springer-Lehrbuch;1999

5. Compound Semiconductor Device Structures;Compound Semiconductor Devices;1998-10-15

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