AlGaN-Based Microwave Transmit and Receive Modules

Abstract

ABSTRACTAlGaN High Electron Mobility Transistors (HEMTs) have made great progress for solid state power amplifiers with the demonstration of an X-band power density up to 9.8 W/mm. This high power density is the result of the high current and voltage capability of this material system. Recently, it has also been shown that these devices can achieve low microwave added noise figures (NF = 0.6 dB at 10 GHz) while maintaining a large breakdown voltage (>60 V) and hence a large dynamic range. These results imply that AlGaN HEMTs can be used to perform the active transmit and receive functions in more robust, higher dynamic range modules. In this paper, the progress in AlGaN microwave HEMTs is reviewed and the issues related to AlGaN transmit and receive (T/R) modules are described.