Impact Ionization in InAlAs/InP Single Channel Heterojunction Field Effect Transistors
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Published:1999-05-15
Issue:Part 2, No. 5B
Volume:38
Page:L560-L562
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Gautier-Levine Astrid,Teissier Roland,Nezzari Amar,Rao Elchuri,Décobert Jean,Pelouard Jean-Luc,Scavennec André
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering